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Proceedings Paper

Physical resist model calibration for implant level using laser-written photomasks
Author(s): Dongbing Shao; Bidan Zhang; Sajan Marokkey; Todd C. Bailey; Derren N. Dunn; Emily E. Gallagher; Yea-Sen Lin; Takashi Murakami; Seiji Nakagawa; Chandrasekhar Sarma; Mohamed Talbi
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Paper Abstract

To reduce cost, implant levels usually use masks fabricated with older generation mask tools, such as laser writers, which are known to introduce significant mask errors. In fact, for the same implant photolithography process, Optical Proximity Correction (OPC) models have to be developed separately for the negative and positive mask tones to account for the resulting differences from the mask making process. However, in order to calibrate a physical resist model, it is ideal to use single resist model to predict the resist performance under the two mask polarities. In this study, we show our attempt to de-convolute mask error from the Correct Positive (CP) and Correct Negative (CN) tone CD data collected from bare Si wafer and derive a single resist model. Moreover, we also present the predictability of this resist model over a patterned substrate by comparing simulated CD/profiles against wafer data of various features.

Paper Details

Date Published: 24 September 2010
PDF: 11 pages
Proc. SPIE 7823, Photomask Technology 2010, 78230U (24 September 2010); doi: 10.1117/12.865131
Show Author Affiliations
Dongbing Shao, IBM Systems and Technology (United States)
Bidan Zhang, IBM Systems and Technology (United States)
Sajan Marokkey, Infineon Technologies (United States)
Todd C. Bailey, IBM Systems and Technology (United States)
Derren N. Dunn, IBM Systems and Technology (United States)
Emily E. Gallagher, IBM Systems and Technology (United States)
Yea-Sen Lin, IBM Systems and Technology (United States)
Takashi Murakami, Renesas Electronics Corp. (United States)
Seiji Nakagawa, Toshiba America Electronic Components Inc. (United States)
Chandrasekhar Sarma, Infineon Technologies (United States)
Mohamed Talbi, IBM Systems and Technology (United States)

Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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