In electron beam lithography, the electron scattering and the corresponding proximity effect highly influence the feature resolution. Especially for sub-100 nm features a compensation for this effect is needed. There are several methods of determination of the proximity parameters, which mostly are time-consuming and complex due to a need of an initial proximity effect correction and immense measurement effort. In this paper the checkerboard pattern is proposed to provide the opportunity for proximity parameter determination in a fast and easy manner without using a sophisticated CD-SEM metrology. The concept is illustrated by simulation and first experimental results are shown.

Date Published: 15 May 2010
PDF: 9 pages
Proc. SPIE 7545, 26th European Mask and Lithography Conference, 754507 (15 May 2010); doi: 10.1117/12.864315

Published in SPIE Proceedings Vol. 7545:
26th European Mask and Lithography Conference
Uwe F.W. Behringer; Wilhelm Maurer, Editor(s)