Share Email Print
cover

Proceedings Paper

New method to determine process window considering pattern failure
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this paper, new metric, acid concentration distribution image log slope (AILS) is suggested to predict pattern failure in photo lithography. By introducing AILS, pattern fidelity can be determined as numbers. With evaluating at the top 10% and bottom 10% of photo resist, various kinds of pattern failures are categorized and they can be predicted to be failed or not. The simulation results are compared with wafer experiment results and shows great prediction accuracy. In order to evaluate hot spot regarding pattern failure in all possible pitch and duty ratio, in-house image quality analysis tool is used and compared with wafer experimental results. Minimum normalized AILS (NAILS) to cause pattern bridge is larger than that to cause lift off. Both pattern failures are dependent of AILS and CD but the effect of CD on pattern failure is stronger than AILS's

Paper Details

Date Published: 24 September 2010
PDF: 7 pages
Proc. SPIE 7823, Photomask Technology 2010, 78230H (24 September 2010); doi: 10.1117/12.864301
Show Author Affiliations
Seung-Hune Yang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Seongho Moon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Junghoon Ser, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Young-Chang Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sung-Woon Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chang-Jin Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

© SPIE. Terms of Use
Back to Top