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Proceedings Paper

Impact of mask topography and multilayer stack on high NA imaging of EUV masks
Author(s): Johannes Ruoff
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Paper Abstract

We study the impact of mask topography effects on imaging with high NA. We show that with the current mask technology, it is possible to obtain reasonable imaging results up to 0.32 NA, however, for higher NA, the reticle design needs to be optimized in order to ensure proper imaging. We examine the influence of the multilayer and the effects of the finite absorber height on the imaging with high NA optics and devise measures which have to be taken into consideration in order to guarantee proper imaging at high NA.

Paper Details

Date Published: 29 September 2010
PDF: 15 pages
Proc. SPIE 7823, Photomask Technology 2010, 78231N (29 September 2010); doi: 10.1117/12.864120
Show Author Affiliations
Johannes Ruoff, Carl Zeiss SMT AG (Germany)


Published in SPIE Proceedings Vol. 7823:
Photomask Technology 2010
M. Warren Montgomery; Wilhelm Maurer, Editor(s)

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