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Proceedings Paper

193nm resist deprotection study from outgassing measurements by TD-GCMS/FID
Author(s): Raluca Tiron; Samir Derrough; Hervé Fontaine; Sylviane Cetre; Damien Perret; James W. Thackeray; Patrick Paniez
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Paper Abstract

A methodology was developed in order to characterize the deprotection mechanisms implied in 193nm chemically amplified (CA) resists. This method is based on resist outgassing measurements as a function of exposure dose and bake temperature using Thermal Desorption-Gas Chromatography - Mass Spectrometry / Flame Ionization Detector (TDGCMS/ FID) technique. This approach allows both quantitative and qualitative studies of the outgassing behaviour and was validated from a 193nm model resist representative of CA formulations. In so doing, the identification of outgassed by-products respectively coming from the PAG, from the polymer as well as from the solvent is made possible. In parallel, quantitative results as a function of exposure dose and temperature allowed us to monitor the deprotection process and the solvent evaporation. The quantitative results obtained by this technique were in good agreement with Thermo-Gravimetric Analysis (TGA) results. Such a methodology can be used not only to characterise 193nm resist outgassing during exposure, but also be extended to monitor resist behaviour during implant, thermal treatment, e-beam exposure.

Paper Details

Date Published: 15 May 2010
PDF: 10 pages
Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450G (15 May 2010); doi: 10.1117/12.863150
Show Author Affiliations
Raluca Tiron, CEA, LETI (France)
Samir Derrough, CEA, LETI (France)
Hervé Fontaine, CEA, LETI (France)
Sylviane Cetre, CEA, LETI (France)
Damien Perret, Dow Electronic Materials (France)
James W. Thackeray, Dow Electronic Materials (United States)
Patrick Paniez, CNRS-LTM (France)

Published in SPIE Proceedings Vol. 7545:
26th European Mask and Lithography Conference
Uwe F.W. Behringer; Wilhelm Maurer, Editor(s)

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