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Proceedings Paper

Pyroelectric photodetector based on ferroelectric crystal-semiconductor thin film heterostructure
Author(s): Armen Poghosyan; N. R. Aghamalyan; R. Guo; R. K. Hovsepyan; E. S. Vardanyan
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Paper Abstract

Very important advantage of ZnO thin films is an opportunity of use in the composite heterostructures opening opportunities for development of ZnO-based optoelectronics devices. In this work we report the preparation of ferroelectric crystal - ZnO thin film heterostructures by vacuum deposition method and creation of new type of pyroelectric photodetector. The ferroelectric field effect transistor has been prepared using ZnO:Li films as transistor channel and LiNbO3 and TGS crystals as pyroelectric sensitive element. The photoelectric properties (currents ratio, charge carriers mobility, ampere-watt sensitivity in IR diapason, NEP sensitivity, and photocurrent kinetics) of prepared heterostructures were investigated and first samples of novel pyroelectric photodetector with high sensitivity and detectability were prepared.

Paper Details

Date Published: 18 August 2010
PDF: 6 pages
Proc. SPIE 7781, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV, 778117 (18 August 2010); doi: 10.1117/12.863037
Show Author Affiliations
Armen Poghosyan, Institute for Physical Research (Armenia)
N. R. Aghamalyan, Institute for Physical Research (Armenia)
R. Guo, The Univ. of Texas at San Antonio (United States)
R. K. Hovsepyan, Institute for Physical Research (Armenia)
E. S. Vardanyan, Institute for Physical Research (Armenia)

Published in SPIE Proceedings Vol. 7781:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IV
Shizhuo Yin; Ruyan Guo, Editor(s)

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