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Proceedings Paper

Diffusion studies on Si-PIN x-ray detectors with guard-rings for single photon counting sensors
Author(s): Kisung Lee; J. C. Yoon; Young Jun Jung; Sungchae Jeon; Bonghoe Kim; Jin-young Kim
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Paper Abstract

PIN diodes for digital X-ray detection as a single photon counting sensors were fabricated with a guard ring structure with p+ doping for reducing the leakage current. The efficiency of the guard ring was verified by significantly reduced leakage current compared to the Si-PIN diodes without guard ring structure and the gap distance between the active area and the guard ring was optimized as the leakage currents showed strong dependency on it. In this paper, secondary ion mass spectroscopy (SIMS) profile was measured and characterized to investigate potential process improvement. Since a large transient enhanced diffusion (TED) as the broadening of 200 nm at the tail is observed in the boron SIMS profile, it is suggested to reduce the annealing process time of RTA or to use spike annealing process. Also, in order to investigate the effect of reduced TED or other possible process to achieve shorter junction depth for improving device performance, it is in progress to fully optimize the process simulation incorporating the transient enhanced diffusion model of boron in Si.

Paper Details

Date Published: 27 August 2010
PDF: 7 pages
Proc. SPIE 7805, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII, 78051H (27 August 2010);
Show Author Affiliations
Kisung Lee, Korea Univ. (Korea, Republic of)
J. C. Yoon, Pacific Islands Univ. (United States)
Young Jun Jung, Korea Univ. (Korea, Republic of)
Sungchae Jeon, Korea Electrotechnology Research Institute (Korea, Republic of)
Bonghoe Kim, Korea Electrotechnology Research Institute (Korea, Republic of)
Jin-young Kim, Imperial College London (United Kingdom)


Published in SPIE Proceedings Vol. 7805:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XII
Arnold Burger; Larry A. Franks; Ralph B. James, Editor(s)

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