In this paper we present a full three-dimensional numerical simulation of Arsenic-diffused HgCdTe based planar pixel arrays intended for detection in the medium- and long-wavelength infrared spectral range. As-diffused planar detector array structures, as opposed to mesa-type structures, do not require any etching processing that causes surface damages and consequently may lead to detector arrays with higher performance than the mesa type. Because of the interest in high performance planar infrared focal plane arrays, it is critical to develop numerical simulation models useful to predict the array's performance before they are fabricated. The goal of this work is to study the dependence of the quantum efficiency and the pixel-to-pixel cross talk on the geometrical and material parameters.

Date Published: 26 August 2010
PDF: 6 pages
Proc. SPIE 7780, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, 77800J (26 August 2010); doi: 10.1117/12.861107

Published in SPIE Proceedings Vol. 7780:
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
Eustace L. Dereniak; Randolph E. Longshore; Manijeh Razeghi; John P. Hartke; Ashok K. Sood; Paul D. LeVan, Editor(s)