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Proceedings Paper

Optical properties of silicon nanowires array fabricated by metal-assisted electroless etching
Author(s): Zhongyi Guo; Jin-Young Jung; Keya Zhou; Yanjun Xiao; Sang-won Jee; S. A. Moiz; Jung-Ho Lee
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Paper Abstract

The optical properties of the silicon naniwires (SiNWs) fabricated by a method of metal-assisted electroless etching have been investigated. The optical parameters of both SiNWs and the Si wafer, including dielectric function (ε (ω) ) and the effective refractive index ( N(ω) ), could be obtained from the light-absorption theory and Kramers-Kronig relation. From the comparation of calculated characteristics, we can observe that the refractive index of the SiNWs is reduced to 1.26 while that of Si wafer is changing from 2.4 to 6.2 in the range of 1.5-4eV, and the imaginary part of complex dielectric constant of Si NWs is about two orders of magnitude lower than that of Si wafer. There are two peak positions in the curve of Si wafer, while just one broad peak position in that of Si NWs. These differences could be considered as the reasons for the special characteristic of the Si NWs.

Paper Details

Date Published: 24 August 2010
PDF: 7 pages
Proc. SPIE 7772, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion, 77721C (24 August 2010); doi: 10.1117/12.860397
Show Author Affiliations
Zhongyi Guo, Hanyang Univ. (Korea, Republic of)
Jin-Young Jung, Hanyang Univ. (Korea, Republic of)
Keya Zhou, Hanyang Univ. (Korea, Republic of)
Yanjun Xiao, Hanyang Univ. (Korea, Republic of)
Sang-won Jee, Hanyang Univ. (Korea, Republic of)
S. A. Moiz, Hanyang Univ. (Korea, Republic of)
Jung-Ho Lee, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7772:
Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion
Loucas Tsakalakos, Editor(s)

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