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Proceedings Paper

Organic n-channel thin film transistors based on dichlorinated naphthalene diimides
Author(s): M. Stolte; S.-L. Suraru; F. Würthner; J. H. Oh; Z. Bao; J. Brill; M. Könemann; J. Qu; U. Zschieschang; H. Klauck
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Paper Abstract

Five core-dichlorinated naphthalene diimides (NDIs) bearing several fluoroalkyl-substituents at the imide nitrogens were synthesized, characterized and employed in organic n-channel thin-film transistors with a vacuum-deposited semiconductor layer on 110 nm thick SiO2 (100 nm)/AlOx (8 nm)/SAM (1.7 nm) and 5.7 nm thick AlOx (3.6 nm)/SAM (2.1 nm) gate dielectrics. The electron mobility of the thin-film transistors under ambient conditions is as large as 1.3 cm2/Vs on the thicker gate dielectric. On the thinner gate dielectric the mobility is lower (0.4 cm2/Vs) but enables switching at gate-source voltages of only 3V. Such outstanding performance together with the feasible synthetic access to these compounds make these semiconductors highly promising for low-cost, large-area, and flexible electronics.

Paper Details

Date Published: 17 August 2010
PDF: 8 pages
Proc. SPIE 7778, Organic Field-Effect Transistors IX, 777804 (17 August 2010); doi: 10.1117/12.859829
Show Author Affiliations
M. Stolte, Julius-Maximilians-Univ. Würzburg (Germany)
S.-L. Suraru, Julius-Maximilians-Univ. Würzburg (Germany)
F. Würthner, Julius-Maximilians-Univ. Würzburg (Germany)
J. H. Oh, Stanford Univ. (United States)
Z. Bao, Stanford Univ. (United States)
J. Brill, InnovationLab GmbH, BASF SE (Germany)
BASF SE (Germany)
M. Könemann, InnovationLab GmbH, BASF SE (Germany)
BASF SE (Germany)
J. Qu, InnovationLab GmbH (Germany)
BASF SE (Germany)
U. Zschieschang, Max-Planck-Institut für Festkörperforschung (Germany)
H. Klauck, Max-Planck-Institut für Festkörperforschung (Germany)

Published in SPIE Proceedings Vol. 7778:
Organic Field-Effect Transistors IX
Zhenan Bao; Iain McCulloch, Editor(s)

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