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Optical, structural properties and experimental procedures of GaGdN grown by metalorganic chemical vapor deposition
Author(s): I-Hsiang Hung; Yu-Hsiang Lai; Zhe Chuan Feng; Shalini Gupta; Tahir Zaidi; Ian Ferguson; Weijie Lu
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Paper Abstract

Rare earth (RE) elements are promising alternatives to transition metals (TMs) for use in developing a dilute magnetic semiconductor (DMS) for spintronics applications. Instead of relying on the d-shell electrons of the TMs as the magnetic element, the 4f electrons from the RE elements are used. The 4f RE elements can have larger magnetic moments as compared to 3d TMs, because the 4f orbits are localized and the direct coupling between the 4f ions is weak. There have been several reports of using RE elements for optoelectronic applications, as their various internal f-shell electronic transitions vary in energy from infrared to visible.

Paper Details

Date Published: 18 August 2010
PDF: 10 pages
Proc. SPIE 7784, Tenth International Conference on Solid State Lighting, 77840H (18 August 2010); doi: 10.1117/12.859107
Show Author Affiliations
I-Hsiang Hung, National Taiwan Univ. (Taiwan)
Yu-Hsiang Lai, National Taiwan Univ. (Taiwan)
Zhe Chuan Feng, National Taiwan Univ. (Taiwan)
Shalini Gupta, Georgia Institute of Technology (United States)
Tahir Zaidi, Georgia Institute of Technology (United States)
Ian Ferguson, The Univ. of North Carolina at Charlotte (United States)
Weijie Lu, Fisk Univ. (United States)

Published in SPIE Proceedings Vol. 7784:
Tenth International Conference on Solid State Lighting
Ian Ferguson; Matthew H. Kane; Nadarajah Narendran; Tsunemasa Taguchi, Editor(s)

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