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Proceedings Paper

Nonlinear silicon photonics
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Paper Abstract

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

Paper Details

Date Published: 17 May 2010
PDF: 13 pages
Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 771904 (17 May 2010); doi: 10.1117/12.858153
Show Author Affiliations
Kevin K. Tsia, Univ. of California, Los Angeles (United States)
Univ. of Hong Kong (Hong Kong, China)
Bahram Jalali, Univ. of California, Los Angeles (United States)

Published in SPIE Proceedings Vol. 7719:
Silicon Photonics and Photonic Integrated Circuits II
Giancarlo Cesare Righini, Editor(s)

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