
Proceedings Paper
Current-voltage curves of PV metamaterial based on the nanostructured SiFormat | Member Price | Non-Member Price |
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Paper Abstract
Nanostructured Si devices based on a nanoscale Si-layered system may constitute an
interesting system for enlarging optical and electrical functions in Si optoelectronic technology.
Strong enough physical interactions transform the initial material, without changing its chemical
composition, leading to a Si metamaterial. We report here some specific electrical properties which
illustrate the complexity of the electron transport in test structures. I-V measurements on samples
differentiated exclusively by their surface features are given for PV and photodiode modes as well as
time-resolved current collection under stabilized voltage. The measurements have been carried out
over a large range of solar light excitation intensities.
Paper Details
Date Published: 18 May 2010
PDF: 6 pages
Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251I (18 May 2010); doi: 10.1117/12.856307
Published in SPIE Proceedings Vol. 7725:
Photonics for Solar Energy Systems III
Ralf B. Wehrspohn; Andreas Gombert, Editor(s)
PDF: 6 pages
Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251I (18 May 2010); doi: 10.1117/12.856307
Show Author Affiliations
Zbigniew T. Kuznicki, Pôle API Parc d'Innovation (France)
Published in SPIE Proceedings Vol. 7725:
Photonics for Solar Energy Systems III
Ralf B. Wehrspohn; Andreas Gombert, Editor(s)
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