Nanostructured Si devices based on a nanoscale Si-layered system may constitute an interesting system for enlarging optical and electrical functions in Si optoelectronic technology. Strong enough physical interactions transform the initial material, without changing its chemical composition, leading to a Si metamaterial. We report here some specific electrical properties which illustrate the complexity of the electron transport in test structures. I-V measurements on samples differentiated exclusively by their surface features are given for PV and photodiode modes as well as time-resolved current collection under stabilized voltage. The measurements have been carried out over a large range of solar light excitation intensities.

Date Published: 18 May 2010
PDF: 6 pages
Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251I (18 May 2010); doi: 10.1117/12.856307

Published in SPIE Proceedings Vol. 7725:
Photonics for Solar Energy Systems III
Ralf B. Wehrspohn; Andreas Gombert, Editor(s)