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Proceedings Paper

Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection
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Paper Abstract

The bandstructure tunability of Type II antimonide-based superlattices has been significantly enhanced since the introduction of the M-structure superlattice, resulting in significant improvements of Type II superlattice infrared detectors. By using M-structure, we developed the pMp design, a novel infrared photodetector architecture that inherits the advantages of traditional photoconductive and photovoltaic devices. This minority electron unipolar device consists of an M-structure barrier layer blocking the transport of majority holes in a p-type semiconductor, resulting in an electrical transport due to minority carriers with low current density. Applied for the very long wavelength detection, at 77K, a 14μm cutoff detector exhibits a dark current 3.3 mA/cm2, a photoresponsivity of 1.4 A/W at 50mV bias and the associated shot-noise detectivity of 4x1010 Jones.

Paper Details

Date Published: 22 January 2010
PDF: 9 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760825 (22 January 2010); doi: 10.1117/12.855635
Show Author Affiliations
Binh-Minh Nguyen, Northwestern Univ. (United States)
Siamak Abdollahi Pour, Northwestern Univ. (United States)
Simeon Bogdanov, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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