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Proceedings Paper

Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film
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Paper Abstract

We report on the formation of spatially localized crystals in SiO2-SnO2 thin films fabricated by the sol-gel technique. This material presents an intense absorption band (α≈103cm-1) in the UV region. A continuous wave UV laser operating at 266nm focused through a microscope objective is used as an effective tool to modify locally the matrix containing photorefractive SnO2. The UV micro-Raman spectrometer is used to study the evolution of SnO2 crystals in the thin film. The appearance of the Raman scattering peak at 621cm-1, assigned to the A1g mode of rutile SnO2, confirms the formation of nanocrystals in the focalised UV irradiated zone.

Paper Details

Date Published: 17 May 2010
PDF: 5 pages
Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77191B (17 May 2010); doi: 10.1117/12.854894
Show Author Affiliations
B. N. Shivakiran Bhaktha, Lab. de Physique de la Matière Condensée, CNRS, Univ. de Nice Sophia Antipolis (France)
Simone Berneschi, IFAC-CNR (Italy)
Gualtiero Nunzi Conti, IFAC-CNR (Italy)
Giancarlo C. Righini, IFAC-CNR (Italy)
Andrea Chiappini, IFN-CNR (Italy)
Alessandro Chiasera, IFN-CNR (Italy)
Maurizio Ferrari, IFN-CNR (Italy)
Sylvia Turrell, LASIR, CNRS (France)
CERLA, Univ. Lille 1 (France)

Published in SPIE Proceedings Vol. 7719:
Silicon Photonics and Photonic Integrated Circuits II
Giancarlo Cesare Righini, Editor(s)

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