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Proceedings Paper

Noise as characterization for GaSb-based laser diodes prepared by molecular beam epitaxy
Author(s): Z. Chobola; M. Lunak; J. Vanek; E. Hulicius
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Paper Abstract

A non-destructive method of reliability prediction for PN junction microelectronic devices is presented. Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) lasers were prepared by Molecular Beam Epitaxy were measured in order to evaluate the new MBE technology.

Paper Details

Date Published: 27 April 2010
PDF: 7 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77202C (27 April 2010); doi: 10.1117/12.854891
Show Author Affiliations
Z. Chobola, Brno Univ. of Technology (Czech Republic)
M. Lunak, Brno Univ. of Technology (Czech Republic)
J. Vanek, Brno Univ. of Technology (Czech Republic)
E. Hulicius, Institute of Physics of the ASCR, v.v.i. (Czech Republic)

Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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