We demonstrate a dilute nitride (GaInAsN) based gain mirror capable of meeting the wavelength and linewidth requirements for laser guide stars. The mirror was grown by molecular beam epitaxy on a GaAs(100) substrate. The heat generated during laser operation was extracted from the active region with a wedged intracavity CVD diamond. An intracavity birefringent filter was employed for wavelength selection and a YAG etalon for linewidth narrowing. The laser radiation was intra-cavity frequency doubled to achieve emission at 589 nm. The frequency-doubled semiconductor disk laser emitted a narrow linewidth beam (~20 MHz) at 589 nm. In a free-running mode, the laser emitted more than 6W of yellow-orange light with a maximum conversion efficiency of 15.5%.

Date Published: 27 April 2010
PDF: 7 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772016 (27 April 2010); doi: 10.1117/12.854747

Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)