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Proceedings Paper

The metal hard-mask approach for contact patterning
Author(s): J.-F. de Marneffe; F. Lazzarino; D. Goossens; Th. Conard; I. Hoflijk; D. Shamiryan; H. Struyf; W. Boullart
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Paper Abstract

Within the metal hard-mask (MHM) approach for contact patterning, the SiO2:TiN and SiO2:Si3N4 etch selectivities have been studied for an Ar-C4F8-CO-based discharge in a dual-frequency capacitive coupled plasma (DFC-CCP) chamber, as a function of gas additives and driving 2 MHz power. It is found that the O2 addition does dramatically decrease the SiO2:TiN and SiO2:Si3N4 selectivities, while 2MHz power raises the SiO2:Si3N4 but decreases the SiO2:TiN. The observed selectivity result from a balance between the sputtering by inert ions and the growth of a passivating fluorocarbon film, which thickness and composition depends on the substrate nature. Selectivity is also influenced by species kinetics at the plasma-surface interface.

Paper Details

Date Published: 26 February 2010
PDF: 6 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752106 (26 February 2010); doi: 10.1117/12.854680
Show Author Affiliations
J.-F. de Marneffe, IMEC (Belgium)
F. Lazzarino, IMEC (Belgium)
D. Goossens, IMEC (Belgium)
Th. Conard, IMEC (Belgium)
I. Hoflijk, IMEC (Belgium)
D. Shamiryan, IMEC (Belgium)
H. Struyf, IMEC (Belgium)
W. Boullart, IMEC (Belgium)

Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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