
Proceedings Paper
Versatile mode-locked quantum-dot laser diodesFormat | Member Price | Non-Member Price |
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Paper Abstract
Semiconductor quantum-dots have been recently showing great promise for the generation of ultrashort pulses, forming
the basis of very compact and efficient ultrafast laser sources. In this paper we discuss how the unique properties of
quantum-dot materials can be exploited in novel and versatile mode-locking regimes in InAs/GaAs quantum-dot edge-emitting
lasers, both in monolithic and external cavity configurations. We present the current status of our research on
ultrashort pulse generation involving ground (1260nm) and excited-state (1180nm) transitions, as well as the recent
progress in external-cavity broadband tunable quantum-dot lasers.
Paper Details
Date Published: 27 April 2010
PDF: 8 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200W (27 April 2010); doi: 10.1117/12.854639
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
PDF: 8 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200W (27 April 2010); doi: 10.1117/12.854639
Show Author Affiliations
M. A. Cataluna, Univ. of Dundee (United Kingdom)
E. U. Rafailov, Univ. of Dundee (United Kingdom)
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
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