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Proceedings Paper

Terahertz-range stimulated emission due to electronic nonlinear frequency conversion in silicon
Author(s): Sergey G. Pavlov; Heinz-Wilhelm Hübers; Ute Böttger; Rene Eichholz; Valery N. Shastin; Nikolay V. Abrosimov; Helge Riemann; Hans-Joachim Pohl; Britta Redlich
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Paper Abstract

Silicon-based semiconductors offer optically low-loss and high-thermal-conducting lattice for the broad-band terahertz active media that can be used in the range of 5-7 THz. We report on realization of the terahertz-range stimulated emission from monocrystalline natural and isotopically enriched silicon crystals doped by group-V donor centers due to nonlinear frequency conversion. Lasing in the frequency bands of 1.2 - 1.8 THz; 2.5 - 3.4 THz has been achieved from silicon crystals doped by phosphorus and in the frequency band of 4.6 - 6.4 THz from different donors under optical pumping by radiation of mid-infrared free electron laser at cryogenic temperatures. Analysis of the data shows that the emission in high-frequency band corresponds to electronic Stokes-shifted Raman-type lasing. The low-frequency bands indicate on high-order nonlinear frequency conversion processes similar to four-wave mixing accompanied by highenergy intervalley g-phonons and f-phonons of host lattice. These lasers supplement terahertz silicon lasers operating on transitions between donor states.

Paper Details

Date Published: 17 May 2010
PDF: 5 pages
Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77190X (17 May 2010); doi: 10.1117/12.854500
Show Author Affiliations
Sergey G. Pavlov, Deutsches Zentrum für Luft- und Raumfahrt e.V. (Germany)
Heinz-Wilhelm Hübers, Deutsches Zentrum für Luft- und Raumfahrt e.V. (Germany)
Technische Univ. Berlin (Germany)
Ute Böttger, Deutsches Zentrum für Luft- und Raumfahrt e.V. (Germany)
Rene Eichholz, Deutsches Zentrum für Luft- und Raumfahrt e.V. (Germany)
Valery N. Shastin, Institute for Physics of Microstructures (Russian Federation)
Nikolay V. Abrosimov, Leibniz-Institut für Kristallzüchtung (Germany)
Helge Riemann, Leibniz-Institut für Kristallzüchtung (Germany)
Hans-Joachim Pohl, VITCON Projectconsult GmbH (Germany)
Britta Redlich, FOM-Institute for Plasma Physics Rijnhuizen (Netherlands)

Published in SPIE Proceedings Vol. 7719:
Silicon Photonics and Photonic Integrated Circuits II
Giancarlo Cesare Righini, Editor(s)

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