
Proceedings Paper
Oxide confined 850-nm VCSELs for high-speed datacom applicationsFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
Vertical cavity surface emitting lasers (VCSELs) are low cost and reliable light sources for high-speed local area and
storage area network (LAN/SAN) optical fiber data communication systems and all other short-reach high-speed data
transfer applications. The intrinsic limitations of copper-based electrical links at data rates exceeding 10 Gbit/s leads to a
progressive movement wherein optical communication links replace traditional short-reach (300 m or shorter) copper
interconnects. The wavelength of 850 nm is the standard for LAN/SAN applications as well as for several other evolving
short-reach application areas including Fibre Channel, InfiniBand, Universal Serial Bus (optical USB), and active optical
cables. Here we present our recent results on 850 nm oxide-confined VCSELs operating at data bit rates up to 40 Gbit/s
at low current densities of ~10 kA/cm2 ensuring device reliability and long-term stability based on conventional industry
certification specifications. The relaxation resonance frequencies, damping factors, and parasitic cut-off frequencies are
determined for VCSELs with oxide-confined apertures of various diameters. At the highest optical modulation rates the
VCSELs' high speed operation is limited by parasitic cut-off frequencies of 24-28 GHz. We believe that by further
reducing device parasitics we will produce current modulated VCSELs with optical modulation bandwidths larger than
30 GHz and data bit rates beyond 40 Gbit/s.
Paper Details
Date Published: 27 April 2010
PDF: 7 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77201W (27 April 2010); doi: 10.1117/12.854276
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
PDF: 7 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77201W (27 April 2010); doi: 10.1117/12.854276
Show Author Affiliations
Philip Moser, Technische Univ. Berlin (Germany)
Alex Mutig, Technische Univ. Berlin (Germany)
James A. Lott, VI Systems GmbH (Germany)
Sergey Blokhin, Technische Univ. Berlin (Germany)
Alex Mutig, Technische Univ. Berlin (Germany)
James A. Lott, VI Systems GmbH (Germany)
Sergey Blokhin, Technische Univ. Berlin (Germany)
Gerrit Fiol, Technische Univ. Berlin (Germany)
Alexey M. Nadtochiy, Technische Univ. Berlin (Germany)
Nikolai N. Ledentsov, VI Systems GmbH (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)
Alexey M. Nadtochiy, Technische Univ. Berlin (Germany)
Nikolai N. Ledentsov, VI Systems GmbH (Germany)
Dieter Bimberg, Technische Univ. Berlin (Germany)
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
© SPIE. Terms of Use
