
Proceedings Paper
Wavelength beam combining of a 980-nm tapered diode laser bar in an external cavityFormat | Member Price | Non-Member Price |
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Paper Abstract
High power diode lasers are used in a large number of applications. A limiting factor for more widespread use of broad
area lasers is the poor beam quality. Gain guided tapered diode lasers are ideal candidates for industrial applications that
demands watt level output power with good beam quality. By adapting a bar geometry, the output power could be scaled
even up to several tens of watts. Unfortunately, the high divergence which is a characteristic feature of the bar geometry
could lead to a degradation of the overall beam quality of the laser bar. However, spectral beam combining is an
effective solution for preserving the beam quality of the bar in the range of that of a single emitter and at the same time,
enabling the power scaling. We report spectral beam combining applied to a 12 emitter tapered laser bar at 980 nm. The
external cavity has been designed for a wavelength separation of 4.0 nm between the emitters. An output power of 9 W
has been achieved at an operating current of 30 A. The combined beam had an M2 value (1/e2) of 5.3 along the slow axis
which is comparable to that of a single tapered emitter on the laser bar. The overall beam combining efficiency was
measured to be 63%. The output spectrum of the individual emitters was narrowed considerably. In the free running
mode, the individual emitters displayed a broad spectrum of the order of 0.5-1.0 nm while the spectral width has been
reduced to 30-100 pm in the spectral beam combining mode.
Paper Details
Date Published: 27 April 2010
PDF: 8 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77201U (27 April 2010); doi: 10.1117/12.854225
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
PDF: 8 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77201U (27 April 2010); doi: 10.1117/12.854225
Show Author Affiliations
Deepak Vijayakumar, Technical Univ. of Denmark (Denmark)
Ole Bjarlin Jensen, Technical Univ. of Denmark (Denmark)
Ole Bjarlin Jensen, Technical Univ. of Denmark (Denmark)
Birgitte Thestrup, Technical Univ. of Denmark (Denmark)
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
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