
Proceedings Paper
Propagation losses in GaAs/AlOx nonlinear waveguide and their impact on parametric oscillation thresholdFormat | Member Price | Non-Member Price |
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Paper Abstract
Continuously tunable sources with room-temperature operation are required in the mid-infrared region for applications
such as spectroscopy or pollutants monitoring. In this spectral range, optical parametric oscillators (OPOs) are more
versatile than laser diodes.
Guided-wave OPOs constitute a promising perspective, thanks to higher conversion efficiency provided by the
confinement of the interacting waves. While LiNbO3 has been the crystal of choice for a long time, GaAs is a good
alternative thanks to higher nonlinearity, broader transparency range, and optoelectronic integrability. So far, a GaAs
integrated OPO has not yet been demonstrated due to technology induced propagation losses.
Here we present a detailed investigation of the propagation losses in partially oxidized multilayer GaAs/AlAs
waveguides. We have studied the impact of oxidation on the roughness of the multilayer interfaces, via transmission
electron microscopy. While the roughness of our MBE-grown GaAs/AlAs heterostructures is the standard 0.3 nm, it
increases to at least 0.53 nm after AlAs oxidation. Semi-analytical modeling shows that this level of roughness is
responsible for scattering losses, in fair agreement with the measured values. Optimization of the oxidation process is
currently under way with the aim of reaching the OPO oscillation threshold.
Paper Details
Date Published: 4 June 2010
PDF: 9 pages
Proc. SPIE 7728, Nonlinear Optics and Applications IV, 772808 (4 June 2010); doi: 10.1117/12.854157
Published in SPIE Proceedings Vol. 7728:
Nonlinear Optics and Applications IV
Benjamin J. Eggleton; Alexander Luis Gaeta; Neil G. R. Broderick, Editor(s)
PDF: 9 pages
Proc. SPIE 7728, Nonlinear Optics and Applications IV, 772808 (4 June 2010); doi: 10.1117/12.854157
Show Author Affiliations
Erwan Guillotel, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Cyril Langlois, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Marc Savanier, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Filippo Ghiglieno, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Cyril Langlois, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Marc Savanier, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Filippo Ghiglieno, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Sara Ducci, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Ivan Favero, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Giuseppe Leo, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Ivan Favero, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Giuseppe Leo, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris Diderot-Paris 7 (France)
Published in SPIE Proceedings Vol. 7728:
Nonlinear Optics and Applications IV
Benjamin J. Eggleton; Alexander Luis Gaeta; Neil G. R. Broderick, Editor(s)
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