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Proceedings Paper

Terahertz pulse detection by the GaAs Schottky diodes
Author(s): Tina Laperashvili; Orest Kvitsiani; Ilia Imerlishvili; David Laperashvili
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Paper Abstract

We present the results of experimental studies of physical properties of the detection process of GaAs Schottky diodes for terahertz frequency radiation. The development of technology in the THz frequency band has a rapid progress recently. Considered as an extension of the microwave and millimeter wave bands, the THz frequency offers greater communication bandwidth than is available at microwave frequencies. The Schottky barrier contact has an important role in the operation of many GaAs devices. GaAs Schottky diodes have been the primary nonlinear device used in millimeter and sub millimeter wave detectors and receivers. GaAs Schottky diodes are especially interesting due to their high mobility transport characteristics, which allows for a large reduction of the resistance-capacitance (RC) time constant and thermal noise. In This work are investigated the electrical and photoelectric properties of GaAs Schottky diodes. Samples were obtained by deposition of different metals (Au, Ni, Pt, Pd, Fe, In, Ga, Al) on semiconductor. For fabrication metal-semiconductor (MS) structures is used original method of metal electrodepositing. In this method electrochemical etching of semiconductor surface occurs just before deposition of metal from the solution, which contains etching material and metal ions together. For that, semiconductor surface cleaning processes and metal deposition carries out in the same technological process. In the experiments as the electrolyte was used aqueous solution of chlorides. Metal deposition was carried out at room temperature.

Paper Details

Date Published: 4 June 2010
PDF: 8 pages
Proc. SPIE 7728, Nonlinear Optics and Applications IV, 77281K (4 June 2010); doi: 10.1117/12.854048
Show Author Affiliations
Tina Laperashvili, Institute of Cybernetics (Georgia)
Orest Kvitsiani, Institute of Cybernetics (Georgia)
Ilia Imerlishvili, Institute of Cybernetics (Georgia)
David Laperashvili, Georgian Technical Univ. (Georgia)

Published in SPIE Proceedings Vol. 7728:
Nonlinear Optics and Applications IV
Benjamin J. Eggleton; Alexander Luis Gaeta; Neil G. R. Broderick, Editor(s)

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