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Proceedings Paper

Preparation of electrodes for molecular transistor by focused ion beam
Author(s): I. V. Sapkov; V. V. Kolesov; E. S. Soldatov
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Paper Abstract

Blank-chips for molecular transistor were created using milling technology with focused ion beam. Optimal parameters for milling of metal electrodes were found, so it is possible to create a 30 nm gaps suitable for production of system with suspended electrodes. Electrical measurements of a gap show reliable cutting of a metal film. In situ production of simple nanostructures of various shapes potentially useful for quantum devices was demonstrated.

Paper Details

Date Published: 26 February 2010
PDF: 6 pages
Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 752110 (26 February 2010); doi: 10.1117/12.854016
Show Author Affiliations
I. V. Sapkov, Lomonosov Moscow State Univ. (Russian Federation)
V. V. Kolesov, Kotel'nikov Institute of Radioengineering and Electronics (Russian Federation)
E. S. Soldatov, Lomonosov Moscow State Univ. (Russian Federation)

Published in SPIE Proceedings Vol. 7521:
International Conference on Micro- and Nano-Electronics 2009
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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