Proceedings Paper
Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers| Format | Member Price | Non-Member Price |
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Paper Abstract
We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely
biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser
parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account
carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an
optical mode analysis of operation regimes are presented.
Paper Details
Date Published: 27 April 2010
PDF: 8 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200X (27 April 2010); doi: 10.1117/12.853825
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
PDF: 8 pages
Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200X (27 April 2010); doi: 10.1117/12.853825
Show Author Affiliations
Mindaugas Radziunas, Weierstrass Institute for Applied Analysis and Stochastics (Germany)
Andrei G. Vladimirov, Weierstrass Institute for Applied Analysis and Stochastics (Germany)
Andrei G. Vladimirov, Weierstrass Institute for Applied Analysis and Stochastics (Germany)
Evgeny A. Viktorov, Univ. Libre de Bruxelles (Belgium)
Published in SPIE Proceedings Vol. 7720:
Semiconductor Lasers and Laser Dynamics IV
Krassimir Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)
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