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Proceedings Paper

Ultra-high sensitivity CO-sensor based on nanocrystalline metal oxide gate AlGaN/GaN heterostructure
Author(s): Sazia A. Eliza; Robert Olah; Achyut K. Dutta
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Paper Abstract

This paper presents a robust sensor to detect low concentration (<1 ppm) of CO gas. The sensor is based on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor (MOS-HEMT) with a non-conventional gate structure. The performance of the device has been simulated based on the charge control physics of AlGaN/GaN heterostructure transistor. Large sensitivities and widely linear characteristics are obtained for the AlGaN/GaN device based sensor assuming ideal gas-surface kinetics which can be approximated by the proposed gate structure. The sensor generates 0.8 μA of current for 0.5 ppm concentration of CO. The sensor shows linear characteristics for concentration of 1000 ppm CO. The effects of varying aspect ratio on total changes in current, sensitivity and linearity of the device have been simulated.

Paper Details

Date Published: 5 May 2010
PDF: 8 pages
Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76790R (5 May 2010); doi: 10.1117/12.852727
Show Author Affiliations
Sazia A. Eliza, Banpil Photonics, Inc. (United States)
Robert Olah, Banpil Photonics, Inc. (United States)
Achyut K. Dutta, Banpil Photonics, Inc. (United States)

Published in SPIE Proceedings Vol. 7679:
Micro- and Nanotechnology Sensors, Systems, and Applications II
Thomas George; M. Saif Islam; Achyut Kumar Dutta, Editor(s)

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