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Proceedings Paper

Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires
Author(s): Zihuan Xu; Yumin Liu; Zhongyuan Yu; Wenjie Yao
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Paper Abstract

Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.

Paper Details

Date Published: 2 December 2009
PDF: 7 pages
Proc. SPIE 7631, Optoelectronic Materials and Devices IV, 76311Z (2 December 2009); doi: 10.1117/12.851984
Show Author Affiliations
Zihuan Xu, Beijing Univ. of Posts and Telecommunications (China)
Yumin Liu, Beijing Univ. of Posts and Telecommunications (China)
Zhongyuan Yu, Beijing Univ. of Posts and Telecommunications (China)
Wenjie Yao, Beijing Univ. of Posts and Telecommunications (China)

Published in SPIE Proceedings Vol. 7631:
Optoelectronic Materials and Devices IV
Jian-Jun He; Guang-Hua Duan; Fumio Koyama; Ming C. Wu, Editor(s)

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