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Proceedings Paper

High resolution positive-working molecular resist attached with alicyclic acid-leaving group
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Paper Abstract

Molecular resists are expected to offer the advantages of high resolution and low line width roughness (LWR) for the next-generation lithography. We developed a new molecular resist that showed high resolution by introducing an efficient acid-leaving group to an amorphous molecule, 1,3,5-Tris(p-(p-hydroxy- phenyl) phenyl) benzene (THTPPB). The lithographic properties such as sensitivity, developing rate, and adhesion are considered to be controlled using a suitable acid-leaving group. A molecular resist of THTPPB to which is attached with an alicyclic acid-leaving group, hyperlactyl vinyl ether group (HPVE) showed a high resolution for electron beam (EB) lithography and good etch resistance. Half-pitch 36 nm line-and-space (1:1) positive pattern was fabricated using 100 keV EB with chemically amplified molecular resist based on HPVETPPB.

Paper Details

Date Published: 25 March 2010
PDF: 11 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390S (25 March 2010); doi: 10.1117/12.851392
Show Author Affiliations
Arisa Yamada, Toshiba Corp. (Japan)
Shigeki Hattori, Toshiba Corp. (Japan)
Satoshi Saito, Toshiba Corp. (Japan)
Koji Asakawa, Toshiba Corp. (Japan)
Takeshi Koshiba, Toshiba Corp. (Japan)
Tetsuro Nakasugi, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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