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Proceedings Paper

Semiconductor materials characterization and identification with THz radiation
Author(s): Andre Sokolnikov
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Paper Abstract

Recently evolved THz technology opens up more possibilities for identification and characterization of different semiconductor crystal-based compounds. Since the THz waveform is essentially a direct manifestation of the crystal domain structure, the multicycle THz generation methods allow measuring of geometrical parameters of semiconductor internal structures as well as of dislocations and other structural defects. The above is useful for both characterization and identification of semiconductor materials. Further, methods of THz characterization of II-VI, III-V as well as tinary compounds are discussed. Computational techniques are suggested allowing the noise level reduction for the measurements.

Paper Details

Date Published: 5 May 2010
PDF: 12 pages
Proc. SPIE 7679, Micro- and Nanotechnology Sensors, Systems, and Applications II, 76792C (5 May 2010); doi: 10.1117/12.851185
Show Author Affiliations
Andre Sokolnikov, Visual Solutions and Applications (United States)

Published in SPIE Proceedings Vol. 7679:
Micro- and Nanotechnology Sensors, Systems, and Applications II
Thomas George; M. Saif Islam; Achyut Kumar Dutta, Editor(s)

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