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Proceedings Paper

Low-resistance a-SiGe-based microbolometer pixel for future smart IR FPA
Author(s): J. J. Yon; J. P. Nieto; L. Vandroux; P. Imperinetti; E. Rolland; V. Goudon; C. Vialle; A. Arnaud
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Paper Abstract

In the outlook of the next 12μm pixel node uncooled IR FPA, the Laboratoire InfraRouge (LIR) of the Electronics and Information Technology Laboratory (LETI) is still pushing forward the amorphous silicon (a-Si) based microbolometer technology. A promising approach is the development of a lower resistance a-Si pixel, giving such a microbolometer IR sensor an edge for enhanced bias current capability, resulting in higher sensitivity. With this goal in sight, the paper reports on a preliminary study that aims at incorporating a germanium ratio in the standard amorphous silicon film. This approach successfully resulted in a significantly reduced thin film resistance. Both physical and electrical characteristics of these low resistance a-SiGe thin films are presented. From these basic parameter measurements, the paper further elaborates on the expected IR performance when such an a-SiGe film is applied to an uncooled FPA. Finally, we describe how this new generation of low resistance pixel fits perfectly with the maximum voltage requirement of advanced CMOS processes, which are needed for future smart ROIC and intelligent IR pixel.

Paper Details

Date Published: 3 May 2010
PDF: 7 pages
Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600U (3 May 2010); doi: 10.1117/12.850862
Show Author Affiliations
J. J. Yon, CEA-LETI, MINATEC (France)
J. P. Nieto, CEA-LETI, MINATEC (France)
L. Vandroux, CEA-LETI, MINATEC (France)
P. Imperinetti, CEA-LETI, MINATEC (France)
E. Rolland, CEA-LETI, MINATEC (France)
V. Goudon, CEA-LETI, MINATEC (France)
C. Vialle, CEA-LETI, MINATEC (France)
A. Arnaud, CEA-LETI, MINATEC (France)

Published in SPIE Proceedings Vol. 7660:
Infrared Technology and Applications XXXVI
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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