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Proceedings Paper

Inspecting EUV mask blanks with a 193nm system
Author(s): Stan Stokowski; Joshua Glasser; Gregg Inderhees; Phani Sankuratri
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Paper Abstract

Data and simulation results characterizing the capability of a DUV system to inspect EUV mask blanks and substrates are reported. Phase defects and particles on multilayer (ML) surfaces, ARC-coated absorber, and substrate material are considered. In addition to the previously reported results of inspecting phase defects on multilayer surfaces, phase defects on a quartz substrate surface are shown. The principle of phase detection is described. Simulations show that the 22-nm node requirement for phase defect detection should be met, assuming a reduction in the multilayer roughness. Initial inspections of deposited SiO2 spheres show sensitivities of at least 40 nm on ML and quartz; however, the availability of calibrated spheres of smaller diameters has limited testing below this value. Simulation results show relative sensitivities for detecting SiO2 spheres of different diameters on various EUV materials.

Paper Details

Date Published: 20 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360Z (20 March 2010); doi: 10.1117/12.850825
Show Author Affiliations
Stan Stokowski, KLA-Tencor Corp. (United States)
Joshua Glasser, KLA-Tencor Corp. (United States)
Gregg Inderhees, KLA-Tencor Corp. (United States)
Phani Sankuratri, Consultant (United States)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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