We will report on our advances on the development of a new planar silicon SPAD with high photon detection efficiency (PDE) and good photon timing resolution. We will show that a 10μm thick epitaxial layer allows for the absorption of a significant fraction of the incident photons even at the longer wavelengths, while a suitable electric field profile limits the breakdown voltage value and the timing jitter. Simulations show that the new devices can attain a PDE higher than 30% at a wavelength of 800nm.

Date Published: 28 April 2010
PDF: 12 pages
Proc. SPIE 7681, Advanced Photon Counting Techniques IV, 76810M (28 April 2010);

Published in SPIE Proceedings Vol. 7681:
Advanced Photon Counting Techniques IV
Mark A. Itzler; Joe C. Campbell, Editor(s)