Laser produced plasmas (LPP) of tin offer a promising source of EUV radiation for next generation lithography. By optimizing the laser power density the emission from the unresolved transition array (UTA) in tin can be centered around 13.5 nm thus providing a compact source of EUV light required by the semiconductor industry. However, there remains much to be discovered about the fundamental details of the plasma itself and the conditions for optimizing conversion efficiencies (CE). In the present work we have developed a system to investigate EUV emission from the Sn UTA in the temporal domain. Results are reported for 5, 10 and 50 ns gate widths with 5 ns resolution. The development and collapse of the UTA are shown to closely match the behavior of laser pulse over time.

Date Published: 22 March 2010
PDF: 6 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763637 (22 March 2010); doi: 10.1117/12.848341

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)