Share Email Print

Proceedings Paper

Characterization of cross sectional profile of nanostructure line grating using small angle x-ray scattering
Author(s): Y. Ishibashi; T. Koike; Y. Yamazaki; Y. Ito; Y. Okazaki; K. Omote
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Grazing incidence small-angle x-ray scattering (GISAXS) is proposed as one of the candidates for characterizing cross section of nanostructure line grating pattern. GISAXS is expected as useful nondestructive tool for characterizing cross section. We developed GISAXS and evaluated the capability using the 4X nm resist line patterns and the 3X nm silicon gate line patterns. The GISAXS results are compared with TEM images to evaluate the reconstruction ability in cross section contour profile. The correlation is investigated between GISAXS and the reference tools such as CD-SEM and TEM in the values of CD, height and bottom corner radius. The static repeatability is also evaluated by performing measurement ten times. We report the results of GISAXS capability as cross sectional metrology tool in actual device of 4X and 3X generation.

Paper Details

Date Published: 1 April 2010
PDF: 11 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763812 (1 April 2010); doi: 10.1117/12.848193
Show Author Affiliations
Y. Ishibashi, Toshiba Corp. (Japan)
T. Koike, Toshiba Corp. (Japan)
Y. Yamazaki, Toshiba Corp. (Japan)
Y. Ito, Rigaku Corp. (Japan)
Y. Okazaki, Rigaku Corp. (Japan)
K. Omote, Rigaku Corp. (Japan)

Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?