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Proceedings Paper

After development inspection defectivity studies of an advanced memory device
Author(s): Hyung-Seop Kim; Byoung-Ho Lee; Eric Ma; Fei Wang; Yan Zhao; Kenichi Kanai; Hong Xiao; Jack Jau
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Paper Abstract

In this study, a 3x-nm after development inspection (ADI) wafer with focus exposure matrix (FEM) was inspected with both an advanced optical system and an advanced electron beam inspection (EBI) system, and the inspection results were carefully examined. We found that EBI can capture much more defects than optical system and it also can provide more information about within reticle shot defect distribution. It has high capture rate of certain critical defects that are insensitive to optical system, such as nano-bridges. We also studied the critical dimension (CD) variations caused by the optical inspection and EBI.

Paper Details

Date Published: 1 April 2010
PDF: 14 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380L (1 April 2010); doi: 10.1117/12.848066
Show Author Affiliations
Hyung-Seop Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Byoung-Ho Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Eric Ma, Hermes Microvision, Inc. (United States)
Fei Wang, Hermes Microvision, Inc. (United States)
Yan Zhao, Hermes Microvision, Inc. (United States)
Kenichi Kanai, Hermes Microvision, Inc. (United States)
Hong Xiao, Hermes Microvision, Inc. (United States)
Jack Jau, Hermes Microvision, Inc. (United States)

Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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