The rapid transition to smaller microelectronic feature sizes involves the introduction of new lithography technologies, new photoresist materials, and tighter processes specifications. This transition has become increasingly difficult and costly. The application of advanced computational and control methodologies have seen increasing utilization in recent years to improve yields, throughput, and, in some cases, to enable the actual process to print smaller devices. In this work, we demonstrate recent advances in real-time monitoring and control of these photoresist parameters with the use of innovative technologies, control and signal processing techniques; and integrated metrology to improve the performance of the various photoresist processing steps in the lithography sequence.

Date Published: 14 December 2009
PDF: 11 pages
Proc. SPIE 7520, Lithography Asia 2009, 752035 (14 December 2009); doi: 10.1117/12.847879

Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)