
Proceedings Paper
In-situ monitoring and control of photoresist parameters during thermal processing in the lithography sequenceFormat | Member Price | Non-Member Price |
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Paper Abstract
The rapid transition to smaller microelectronic feature sizes involves the introduction of new lithography technologies,
new photoresist materials, and tighter processes specifications. This transition has become increasingly
difficult and costly. The application of advanced computational and control methodologies have seen increasing
utilization in recent years to improve yields, throughput, and, in some cases, to enable the actual process to
print smaller devices. In this work, we demonstrate recent advances in real-time monitoring and control of these
photoresist parameters with the use of innovative technologies, control and signal processing techniques; and
integrated metrology to improve the performance of the various photoresist processing steps in the lithography
sequence.
Paper Details
Date Published: 14 December 2009
PDF: 11 pages
Proc. SPIE 7520, Lithography Asia 2009, 752035 (14 December 2009); doi: 10.1117/12.847879
Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)
PDF: 11 pages
Proc. SPIE 7520, Lithography Asia 2009, 752035 (14 December 2009); doi: 10.1117/12.847879
Show Author Affiliations
Xiaodong Wu, National Univ. of Singapore (Singapore)
Geng Yang, National Univ. of Singapore (Singapore)
Geng Yang, National Univ. of Singapore (Singapore)
Ee-Xuan Lim, National Univ. of Singapore (Singapore)
Arthur Tay, National Univ. of Singapore (Singapore)
Arthur Tay, National Univ. of Singapore (Singapore)
Published in SPIE Proceedings Vol. 7520:
Lithography Asia 2009
Alek C. Chen; Woo-Sung Han; Burn J. Lin; Anthony Yen, Editor(s)
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