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Proceedings Paper

Techniques for removal of contamination from EUVL mask without surface damage
Author(s): Sherjang Singh; Ssuwei Chen; Tobias Wähler; Rik Jonckheere; Ted Liang; Robert J. Chen; Uwe Dietze
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Paper Abstract

Mask defectivity is an acknowledged road block for the introduction of EUV lithography (EUVL) for manufacturing. There are significant challenges to extend the conventional methods of cleaning developed for standard 193nm optical photomask to meet the specific requirements for EUV mask structure and materials. In this work, the use of UV activated media for EUV mask surface cleaning is evaluated and the effects on Ru capping layer integrity are compared against conventional cleaning methods. Ru layer surface is analyzed using roughness measurements (AFM) and reflectivity changes (EUV-R and optical).

Paper Details

Date Published: 20 March 2010
PDF: 6 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360Y (20 March 2010); doi: 10.1117/12.847026
Show Author Affiliations
Sherjang Singh, HamaTech USA, Inc. (United States)
Ssuwei Chen, HamaTech USA, Inc. (United States)
Tobias Wähler, HamaTech APE GmbH & Co. KG (Germany)
Rik Jonckheere, IMEC (Belgium)
Ted Liang, Intel Corp. (United States)
Robert J. Chen, Intel Corp. (United States)
Uwe Dietze, HamaTech USA, Inc. (United States)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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