Proceedings Paper
Compensation methods for buried defects in extreme ultraviolet lithography masks| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Two methods will be presented to compensate for buried defects in patterned extreme ultraviolet (EUV) masks.
The goal of the methods in this work is to prescribe modifications to the absorber pattern on an EUV mask with a buried
defect so that the final image printed on the wafer matches the intended pattern through focus. The first method uses
pre-calculated design curves to determine the required absorber modification for a given defect. This method is able to
compensate for a defect in focus, but not through focus. A second method is presented, covering the defect with
absorber, which reduces the effect of the defect through focus. Both of these methods work for pit and bump defects.
Paper Details
Date Published: 22 March 2010
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763623 (22 March 2010); doi: 10.1117/12.846671
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763623 (22 March 2010); doi: 10.1117/12.846671
Show Author Affiliations
Chris H. Clifford, Univ. of California, Berkeley (United States)
Tina T. Chan, Univ. of California, Berkeley (United States)
Tina T. Chan, Univ. of California, Berkeley (United States)
Andrew R. Neureuther, Univ. of California, Berkeley (United States)
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
© SPIE. Terms of Use
