Share Email Print

Proceedings Paper

Further investigation of EUV process sensitivities for wafer track processing
Author(s): Neil Bradon; K. Nafus; H. Shite; J. Kitano; H. Kosugi; M. Goethals; S. Cheng; J. Hermans; E. Hendrickx; B. Baudemprez; D. Van Den Heuvel
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

As Extreme ultraviolet (EUV) lithography technology shows promising results below 40nm feature sizes, TOKYO ELECTRON LTD.(TEL) is committed to understanding the fundamentals needed to improve our technology, thereby enabling customers to meet roadmap expectations. TEL continues collaboration with imec for evaluation of Coater/Developer processing sensitivities using the ASML Alpha Demo Tool for EUV exposures. The results from the collaboration help develop the necessary hardware for EUV Coater/Developer processing. In previous work, processing sensitivities of the resist materials were investigated to determine the impact on critical dimension (CD) uniformity and defectivity. In this work, new promising resist materials have been studied and more information pertaining to EUV exposures was obtained. Specifically, post exposure bake (PEB) impact to CD is studied in addition to dissolution characteristics and resist material hydrophobicity. Additionally, initial results show the current status of CDU and defectivity with the ADT/CLEAN TRACK ACTTM 12 lithocluster. Analysis of a five wafer batch of CDU wafers shows within wafer and wafer to wafer contribution from track processing. A pareto of a patterned wafer defectivity test gives initial insight into the process defects with the current processing conditions. From analysis of these data, it's shown that while improvements in processing are certainly possible, the initial results indicate a manufacturable process for EUV.

Paper Details

Date Published: 22 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763630 (22 March 2010);
Show Author Affiliations
Neil Bradon, Tokyo Electron Europe Ltd. (United Kingdom)
K. Nafus, Tokyo Electron Kyushu Ltd. (Japan)
H. Shite, Tokyo Electron Kyushu Ltd. (Japan)
J. Kitano, Tokyo Electron Kyushu Ltd. (Japan)
H. Kosugi, Tokyo Electron Kyushu Ltd. (Japan)
M. Goethals, IMEC (Belgium)
S. Cheng, IMEC (Belgium)
J. Hermans, IMEC (Belgium)
E. Hendrickx, IMEC (Belgium)
B. Baudemprez, IMEC (Belgium)
D. Van Den Heuvel, IMEC (Belgium)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?