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Proceedings Paper

Monitoring and control of photoresist properties and CD during photoresist processing
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Paper Abstract

Current approaches to control critical dimensions (CD) uniformity during lithography is primarily based on run-to- run (R2R) methods where the CD is measured at the end of the process and correction is done on the next wafer (or batch of wafers) by adjusting the parameter set-points. In this work, we proposed a method to monitor the various photoresist parameters (e.g. photoresist thickness, photoactive compound) and CD in-situ and in real-time. Through modeling and real-time identification, we develop new in-situ measurement techniques for the various parameters of interest in the lithography sequence using existing available data in the manufacturing process.

Paper Details

Date Published: 1 April 2010
PDF: 8 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763828 (1 April 2010); doi: 10.1117/12.846560
Show Author Affiliations
Geng Yang, National Univ. of Singapore (Singapore)
Yit-Sung Ngo, National Univ. of Singapore (Singapore)
Andi S. Putra, National Univ. of Singapore (Singapore)
Kar-Tien Ang, National Univ. of Singapore (Singapore)
Arthur Tay, National Univ. of Singapore (Singapore)
Zhong-Ping Fang, A*STAR Singapore Institute of Manufacturing Technology (Singapore)

Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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