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Proceedings Paper

Study of post-develop defect on typical EUV resist
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Paper Abstract

This is the study report about post-develop defect on EUV resist. The resolution, sensitivity, LWR, etc. of EUV resist have been currently studied in the development phase. We have acknowledged that resist generates a lot of defects in its transition from i-line, KrF, ArF and immersion-ArF. However, those were just a couple of defect types in the transition, and they were eliminated through resist improvement. In this study, we confirmed EUV defect type using EUV exposure tool. We also evaluate defect generation using tetrabutyl- ammonium-hydroxide (TBAH) developer. We finally discuss on the difference of defect between using KrF and EUV exposure tool, furthermore difference of defect between using TMAH and TBAH developer.

Paper Details

Date Published: 22 March 2010
PDF: 9 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362Z (22 March 2010); doi: 10.1117/12.846546
Show Author Affiliations
Masahiko Harumoto, SOKUDO Co., Ltd. (Japan)
Kazuhito Shigemori, SOKUDO Co., Ltd. (Japan)
Akihiro Hisai, SOKUDO Co., Ltd. (Japan)
Masaya Asai, SOKUDO Co., Ltd. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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