Recently published experimental results indicate that current resists seem to be very hard to meet the International Roadmap for Semiconductors (ITRS) goals for Resolution, Line Width Roughness (LWR) and Sensitivity (RLS) simultaneously. This RLS trade-off has also been demonstrated through modeling work. RLS goals may not be possible for lithographers to achieve all three simultaneously by applying current standard chemically amplified resists and processes. In this paper, we have synthesized the various PAG(photo-acid generator) bound polymers for different anion size and other molecular weight (Mw). In order to reach the EUV resist targets, we investigate the effect of diffusion length on energy latitude(EL), resolution and LWR under DUV light and EUV exposure. We will also use DUV light to explore the impact of DUV contrast on the RLS relationships in EUV performances. We have measured Eth and LWR in DUV patterning process and correlated them with those obtained in EUV process. By using DUV light source we have setup EUV resist pre-screening and improving method.

Date Published: 22 March 2010
PDF: 7 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76362Y (22 March 2010); doi: 10.1117/12.846518

Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)