
Proceedings Paper
Holographic method for detecting amplitude and phase-shift errors and features in EUV ML reticle blanksFormat | Member Price | Non-Member Price |
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Paper Abstract
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied to the blank,
flood exposed with EUV, and developed. The effect of both phase and reflectivity defects on the reticle is described in
terms of a variation in intensity and phase of the standing wave in the resist. Thin film simulations are performed to
evaluate the contrast generating mechanism for various blank defects. The method was introduced earlier by others 3 and
was shown in experiments to transfer reflectivity defects on the reticle to the developed resist. We propose to reevaluate
the technique with current state-of-the-industry capabilities of resist processing, contamination control and inspection.
Various possible development directions are described.
Paper Details
Date Published: 22 March 2010
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763622 (22 March 2010); doi: 10.1117/12.846505
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763622 (22 March 2010); doi: 10.1117/12.846505
Show Author Affiliations
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
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