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Proceedings Paper

Nikon EUVL development progress update
Author(s): Takaharu Miura; Katsuhiko Murakami; Hidemi Kawai; Yoshiaki Kohama; Kenji Morita; Kazunari Hada; Yukiharu Ohkubo
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Paper Abstract

Nikon has been developing the full field exposure tool called EUV1 for process development of 32nm hp node and beyond. The unique feature of EUV1 is the capability of variable illumination coherence and off-axis illumination. EUV1 was installed in Selete and used for EUV lithography process development. Nikon also has conducted continuous collaborative works with customers using EUV1. Since the last SPIE Symposium in 2009, many exposure results with EUV1 tools were obtained. They showed excellent resolution capability beyond 24nm L/S with off-axis illumination and stable overlay capability of 10nm (Mean + 3 sigma). Process development exposures of test chip patterns are ongoing. With regard to HVM tool development, imaging capability with high NA projection optics and throughput capability are reviewed.

Paper Details

Date Published: 20 March 2010
PDF: 16 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361G (20 March 2010); doi: 10.1117/12.846459
Show Author Affiliations
Takaharu Miura, Nikon Corp. (Japan)
Katsuhiko Murakami, Nikon Corp. (Japan)
Hidemi Kawai, Nikon Corp. (Japan)
Yoshiaki Kohama, Nikon Corp. (Japan)
Kenji Morita, Nikon Corp. (Japan)
Kazunari Hada, Nikon Corp. (Japan)
Yukiharu Ohkubo, Nikon Corp. (Japan)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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