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Proceedings Paper

Highly sensitive EUV-resist based on thiol-ene radical reaction
Author(s): Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kaneyama; Toshiro Itani
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Paper Abstract

Non-conventional chemically amplified (CA) resist was designed. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on multifunctional thiol and poly(4-hydroxystyrene) (PHS) derivatives. Hydroxy groups of PHS were modified with allyl or propargyl moiety. Dissolution property of the modified-PHS in TMAHaq solution was affected by the modification degree. Resist was prepared by mixing the modified-PHS, multifunctional thiol compound, and photoradical generator. Photosensitivity of the resist was studied at 254 and 13.5 nm. The sensitivity was strongly affected by the modification degree of PHS, molecular weight of PHS, molecular weight distribution of PHS, amounts of thiol compound and photoradical generator added. It was found that the present resist system was highly sensitive to EUV exposure.

Paper Details

Date Published: 29 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391J (29 March 2010); doi: 10.1117/12.846339
Show Author Affiliations
Masamitsu Shirai, Osaka Prefecture Univ. (Japan)
Koichi Maki, Osaka Prefecture Univ. (Japan)
Haruyuki Okamura, Osaka Prefecture Univ. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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