
Proceedings Paper
Development of resist material and process for hp-2x-nm devices using EUV lithographyFormat | Member Price | Non-Member Price |
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Paper Abstract
Extreme ultraviolet (EUV) lithography is the leading candidate for the manufacture of semiconductor devices at the hp-
22-nm technology node and beyond. The Selete program covers the evaluation of manufacturability for the EUV
lithography process. So, we have begun a yield analysis of hp-2x-nm test chips using the EUV1 full-field exposure tool.
However, the resist performance does not yet meet the stringent requirements for resolution limit, sensitivity, and line
edge roughness. We reported on Selete standard resist 4 (SSR4) at the EUVL Symposium in 2009. Although it has better
lithographic performance than SSR3 does, pattern collapse limits the resolution to hp 28 nm. To improve the resolution,
we need to optimize the process so as to prevent pattern collapse. An evaluation of SSR4 for the hp-2x-nm generation
revealed that a thinner resist and the use of a TBAH solution for the developer were effective in mitigating this problem.
Furthermore, the use of an underlayer and an alternative rinse solution increased the exposure latitude by preventing
pattern collapse when the resist is overexposed. These optimizations improved the resolution limit to hp 22 nm.
Paper Details
Date Published: 20 March 2010
PDF: 11 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360S (20 March 2010); doi: 10.1117/12.846088
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
PDF: 11 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76360S (20 March 2010); doi: 10.1117/12.846088
Show Author Affiliations
Kentaro Matsunaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Gousuke Shiraishi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Gousuke Shiraishi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kazuyuki Matsumaro, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Joseph Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Joseph Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)
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