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Proceedings Paper

Continuous evolution of lithographic films through process steps: an example with 193 chemically amplified resists
Author(s): Samir Derrough; Raluca Tiron; Damien Perret; James W. Thackeray; Claire Sourd; Patrick Paniez
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Paper Abstract

Chemically Amplified resists are complex systems. If the main mechanisms implied have already been described, the challenge to even better control and model these formulations remains important as performance requirements become more and more stringent and critical dimensions get smaller and smaller. This paper tries to assess and deconvolute some of the main potential mechanisms involved during the process of a 193 nm chemically amplified resist, before correlating them with the final lithographic results obtained. A formulation was selected in order to offer a large range of film physical properties, thus allowing the resist film to switch from non-annealing to annealing conditions. The use of thermal analysis as the main characterization technique allowed correlation between the variations in physico-chemical properties and process conditions. This investigation also included a study of the behavior of some additives during bake steps. In so doing, it became possible to correlate the variations of the resist properties under different bake conditions to the changes in its final lithographic performance, i.e. contrast, sensitivity and line edge roughness.

Paper Details

Date Published: 25 March 2010
PDF: 12 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 763937 (25 March 2010); doi: 10.1117/12.846087
Show Author Affiliations
Samir Derrough, CEA, LETI, MINATEC (France)
Raluca Tiron, CEA, LETI, MINATEC (France)
Damien Perret, Dow Electronic Materials, MINATEC (France)
James W. Thackeray, Dow Electronic Materials (United States)
Claire Sourd, CEA, LETI, MINATEC (France)
Patrick Paniez, CNRS, LTM, MINATEC (France)

Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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