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Proceedings Paper

Temperature-dependent random lasing from GaAs powders
Author(s): T. Nakamura; T. Takahashi; S. Adachi
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Paper Abstract

We investigate the temperature dependence of lasing properties of GaAs powders with non-resonant feedback from T = 30 to 300 K. The lasing peak energy, emission intensity, and width of the lasing emission band are found to be strongly dependent on the temperature. The dependence of the lasing peak energy on T is well explained by a theoretical model for the calculation of the gain spectra of heavily doped n-GaAs. The temperature dependence of the lasing emission intensity is different from the spontaneous emission intensity. We also find that the width of the lasing emission band is linearly proportional to the spontaneous emission band width. The linearity corresponds to the prediction by a diffusion theory.

Paper Details

Date Published: 17 February 2010
PDF: 9 pages
Proc. SPIE 7579, Laser Resonators and Beam Control XII, 75791J (17 February 2010); doi: 10.1117/12.846085
Show Author Affiliations
T. Nakamura, Gunma Univ. (Japan)
T. Takahashi, Gunma Univ. (Japan)
S. Adachi, Gunma Univ. (Japan)

Published in SPIE Proceedings Vol. 7579:
Laser Resonators and Beam Control XII
Alexis V. Kudryashov; Alan H. Paxton; Vladimir S. Ilchenko, Editor(s)

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