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Proceedings Paper

Ultrafast carrier relaxation and diffusion dynamics in ZnO
Author(s): C. J. Cook; S. Khan; G. D. Sanders; X. Wang; D. H. Reitze; Y. D. Jho; Y.-W. Heo; J.-M. Erie; D. P. Norton; C. J. Stanton
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Paper Abstract

We report on measurements and calculations of the ultrafast exciton relaxation dynamics in ZnO. Time-resolved differential reflectivity measurements of bulk ZnO were performed as a function of excitation wavelength. Bi-exponential decays of the A and B exciton states are observed with a fast (~2-5 ps scale) and a slower (~50-100 ps scale) component, which depend strongly on excitation wavelength. Theoretical calculations based on a multi-state, coupled rate equation model were directly compared with the experiments to account for the rapid scattering between the A and B valence bands. Results show that the inter-valence band scattering is most likely not responsible for the fast initial relaxation. Instead our results show that carrier diffusion can play an important role in explaining the initial fast relaxation.

Paper Details

Date Published: 11 February 2010
PDF: 14 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 760304 (11 February 2010); doi: 10.1117/12.845636
Show Author Affiliations
C. J. Cook, Univ. of Florida (United States)
S. Khan, Univ. of Illinois (United States)
G. D. Sanders, Univ. of Florida (United States)
X. Wang, The Univ. of Texas at Austin (United States)
D. H. Reitze, Univ. of Florida (United States)
Y. D. Jho, Gwangju Institute of Science and Technology (Korea, Republic of)
Y.-W. Heo, Univ. of Florida (United States)
J.-M. Erie, Univ. of Florida (United States)
D. P. Norton, Univ. of Florida (United States)
C. J. Stanton, Univ. of Florida (United States)

Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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